A semiconductor memory device is provided to improve the tAA characteristics. The semiconductor memory device includes: a discrimination signal generating unit for generating a first discrimination signal denoting a write operation of the semiconductor memory device; a selective delay unit for delaying a command-group signal in response to a second discrimination signal; and a fuse unit for generating the second discrimination signal based on the first discrimination signal, the second discrimination signal determining whether the selective delay unit selectively delays the command-group signal in response to the first discrimination signal.