Invention Grant
US07709178B2 Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
有权
不含氮化硅的硅湿蚀刻用耐碱性负性光致抗蚀剂
- Patent Title: Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
- Patent Title (中): 不含氮化硅的硅湿蚀刻用耐碱性负性光致抗蚀剂
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Application No.: US11736429Application Date: 2007-04-17
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Publication No.: US07709178B2Publication Date: 2010-05-04
- Inventor: Xing-Fu Zhong , Tony D. Flaim , Jyoti Malhotra
- Applicant: Xing-Fu Zhong , Tony D. Flaim , Jyoti Malhotra
- Applicant Address: US MO Rolla
- Assignee: Brewer Science Inc.
- Current Assignee: Brewer Science Inc.
- Current Assignee Address: US MO Rolla
- Agency: Hovey Williams LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004
Abstract:
New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
Public/Granted literature
- US20080261145A1 ALKALINE-RESISTANT NEGATIVE PHOTORESIST FOR SILICON WET-ETCH WITHOUT SILICON NITRIDE Public/Granted day:2008-10-23
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