发明授权
- 专利标题: Methods of forming nand-type nonvolatile memory devices
- 专利标题(中): 形成非易失性存储器件的方法
-
申请号: US12474896申请日: 2009-05-29
-
公开(公告)号: US07709323B2公开(公告)日: 2010-05-04
- 发明人: Hoo-Sung Cho , Soon-Moon Jung , Won-Seok Cho , Jong-Hyuk Kim , Jae-Hun Jeong , Jae-Hoon Jang
- 申请人: Hoo-Sung Cho , Soon-Moon Jung , Won-Seok Cho , Jong-Hyuk Kim , Jae-Hun Jeong , Jae-Hoon Jang
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR2006-0098583 20061010
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
Methods of forming a NAND-type nonvolatile memory device include: forming first common drains and first common sources alternatively in an active region which is defined in a semiconductor substrate and extends one direction, forming a first insulating layer covering an entire surface of the semiconductor substrate, patterning the first insulating layer to form seed contact holes which are arranged at regular distance and expose the active region, forming a seed contact structure filling each of the seed contact holes and a semiconductor layer disposed on the first insulating layer and contacting the seed contact structures, patterning the semiconductor layer to form a semiconductor pattern which extends in the one direction and is disposed over the active region, forming second common drains and second common sources disposed alternatively in the semiconductor pattern in the one direction, forming a second insulating layer covering an entire surface of the semiconductor substrate, forming a source line pattern continuously penetrating the second insulating layer, the semiconductor pattern and the first insulating layer, the source line pattern being connected with the first and second common sources, wherein a grain boundary of the semiconductor layer is positioned at a center between the one pair of seed contact structures adjacent to each other, and is positioned over the first common drain or the first common source.
公开/授权文献
- US20090233405A1 METHODS OF FORMING NAND-TYPE NONVOLATILE MEMORY DEVICES 公开/授权日:2009-09-17