发明授权
US07709349B2 Semiconductor device manufactured using a gate silicidation involving a disposable chemical/mechanical polishing stop layer
有权
使用涉及一次性化学/机械抛光停止层的栅极硅化物制造的半导体器件
- 专利标题： Semiconductor device manufactured using a gate silicidation involving a disposable chemical/mechanical polishing stop layer
- 专利标题（中）： 使用涉及一次性化学/机械抛光停止层的栅极硅化物制造的半导体器件
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申请号： US11750439申请日： 2007-05-18
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公开(公告)号： US07709349B2公开(公告)日： 2010-05-04
- 发明人: Mark R. Visokay
- 申请人： Mark R. Visokay
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/4763
摘要：
In one aspect, there is provided a method of manufacturing a semiconductor device that comprises placing a blocking layer, a CMP stop layer and a bulk oxide layer over an oxide cap layer that is located over gate structures and source/drains located adjacent thereto. The bulk oxide layer and the CMP stop layer are removed with a CMP process to expose the top of gate electrodes and are removed from over the source/drain areas with a wet etch. The CMP stop layer has a CMP removal rate that is less than a CMP removal rate of the bulk oxide layer and has a wet etch removal rate that is greater than a wet etch removal rate of the blocking layer.
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