发明授权
US07709870B2 CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main body
有权
使用其中N型半导体层层压在P +型基板主体上的N / P +基板的CMOS（互补金属氧化物半导体）型固体摄像装置
- 专利标题： CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main body
- 专利标题（中）： 使用其中N型半导体层层压在P +型基板主体上的N / P +基板的CMOS（互补金属氧化物半导体）型固体摄像装置
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申请号： US11558200申请日： 2006-11-09
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公开(公告)号： US07709870B2公开(公告)日： 2010-05-04
- 发明人: Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
- 申请人： Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-327601 20051111
- 主分类号： H01L31/113
- IPC分类号： H01L31/113
摘要：
A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.
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