发明授权
- 专利标题： Semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件
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申请号： US11338714申请日： 2006-01-25
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公开(公告)号： US07709881B2公开(公告)日： 2010-05-04
- 发明人: Yasuhiko Matsunaga
- 申请人： Yasuhiko Matsunaga
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-175343 20050615
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A control gate includes a first conductive film formed in contact with an inter-gate insulating film and a second conductive film electrically connected to the first conductive film. An inter-level insulating film which insulates first and second stacked gate structures from each other. The inter-level insulating film includes a first insulating film, a second insulating film, and a third insulating film formed between the first and second insulating films. The first insulating film insulates the floating gates from each other and portions of the control gates from each other. The second and third insulating films insulate the other portions of the control gates from each other. The third insulating film has a selective etching ratio with respect to the first and second insulating films.
公开/授权文献
- US20060284268A1 Semiconductor integrated circuit device 公开/授权日：2006-12-21
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