Invention Grant
- Patent Title: Storage device with charge trapping structure and methods
- Patent Title (中): 具有电荷捕获结构和方法的存储装置
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Application No.: US11255458Application Date: 2005-10-20
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Publication No.: US07709882B2Publication Date: 2010-05-04
- Inventor: Hang Liao , Zhizhang Chen , Alexander Govyadinov , Leslie Louis Szepesi, Jr. , Heon Lee
- Applicant: Hang Liao , Zhizhang Chen , Alexander Govyadinov , Leslie Louis Szepesi, Jr. , Heon Lee
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.
Public/Granted literature
- US20060086986A1 Storage device with charge trapping structure and methods Public/Granted day:2006-04-27
Information query
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