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发明授权
US07709947B2 Semiconductor device having semiconductor element with back electrode on insulating substrate 有权
半导体器件具有在绝缘衬底上具有背电极的半导体元件

Semiconductor device having semiconductor element with back electrode on insulating substrate
摘要：
The first external electrode has a main body portion a part of which is buried in a side wall of a case and joining portions protruding from an end of the main body portion toward the inside of the case. Each joining portion of the first external electrode is formed to have a thickness smaller than that of the main body portion, and an end portion of each joining portion is directly joined onto a wiring pattern of the insulating substrate through ultrasonic joining. Therefore, a load and ultrasonic vibration necessary for joining the joining portion onto the wiring pattern can be suppressed, which makes it possible to directly join the first external electrode onto the wiring pattern of the insulating substrate without damaging an insulating member of the insulating substrate.
摘要（中）：

第一外部电极具有主体部分，其一部分被埋在壳体的侧壁中，并且从主体部分的端部朝向壳体的内部突出的接合部分。 第一外部电极的每个接合部分形成为具有比主体部分的厚度小的厚度，并且每个接合部分的端部通过超声波接合直接接合到绝缘基板的布线图案上。 因此，可以抑制将接合部分接合到布线图案上所需的负载和超声波振动，这使得可以在不损坏绝缘基板的绝缘构件的情况下将第一外部电极直接接合到绝缘基板的布线图案上。

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