发明授权
- 专利标题: Highly linear bootstrapped switch with improved reliability
- 专利标题(中): 高度线性自举开关,可靠性提高
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申请号: US12141099申请日: 2008-06-18
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公开(公告)号: US07710164B1公开(公告)日: 2010-05-04
- 发明人: Bhupendra Sharma
- 申请人: Bhupendra Sharma
- 申请人地址: US CA Milpitas
- 专利权人: Intersil Americas Inc.
- 当前专利权人: Intersil Americas Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Townsend and Townsend and Crew LLP
- 主分类号: G11C27/02
- IPC分类号: G11C27/02
摘要:
Circuits, methods, and apparatus that provide bootstrapped switches having improved reliability. One example improves the reliability of a discharge transistor connected to discharge the gate of a switch transistor by decreasing its operating voltage during the discharge. This example provides a discharge transistor having a first source-drain region connected to a gate of a switch transistor. Since the gate of the switch transistor can reach high voltages, if the discharge transistor's second source-drain region is instantaneously tied to ground when the switch's gate is discharged, the discharge transistor's reliability can be degraded due to hot-electron effects. Accordingly, instead of being connected to ground—or an intermediate node that quickly reaches the ground potential during gate discharge—the second source-drain region of the discharge transistor is coupled to an intermediate node that discharges to ground at a slower rate.