发明授权
US07710172B2 DLL circuit, semiconductor memory device using the same, and data processing system 失效
DLL电路,使用相同的半导体存储器件和数据处理系统

DLL circuit, semiconductor memory device using the same, and data processing system
摘要:
A DLL circuit includes a delay line (CDL) (10) that delays a clock signal at a relatively coarse adjustment pitch, a delay line (FDL) (20) that delays the clock signal at a relatively fine adjustment pitch, and phase detecting circuits and counter control circuits that control delay amounts of the delay lines (10, 20). The counter control circuits control the delay line (10) by a linear search method, and control the delay line (20) by a binary search method. As a result, even when the number of bits of the count signal for adjusting the delay line (20) is increased, a delay amount can be determined at a high speed.
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