发明授权
- 专利标题: Gate drive circuit
- 专利标题(中): 门驱动电路
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申请号: US12027616申请日: 2008-02-07
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公开(公告)号: US07710187B2公开(公告)日: 2010-05-04
- 发明人: Kazuaki Hiyama
- 申请人: Kazuaki Hiyama
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-236671 20070912
- 主分类号: H03K17/04
- IPC分类号: H03K17/04
摘要:
A gate drive circuit includes a turn-on side circuit for turning on a gate of a power switching device, the turn-on side circuit including a first turn-on side power supply circuit and a second turn-on side power supply circuit, the first turn-on side power supply circuit including: a first turn-on voltage source for supplying a first turn-on voltage; first turn-on wiring; and a first turn-on switch connected in the first turn-on wiring and controlled by a gate drive signal; and the second turn-on side power supply circuit including: a second turn-on voltage source for supplying a second turn-on voltage applied to the gate of the power switching device to set the power switching device in a steady (on) state; second turn-on wiring; a second turn-on switch connected in the second turn-on wiring; and a turn-on side delay circuit for delaying the gate drive signal and passing it to the second turn-on switch.
公开/授权文献
- US20090066402A1 GATE DRIVE CIRCUIT 公开/授权日:2009-03-12
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