发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US12216138申请日： 2008-06-30
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公开(公告)号： US07710795B2公开(公告)日： 2010-05-04
- 发明人: Khil-Ohk Kang
- 申请人： Khil-Ohk Kang
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor, Inc.
- 当前专利权人： Hynix Semiconductor, Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Law Firm PLC
- 优先权： KR10-2007-0087609 20070830
- 主分类号： G11C7/06
- IPC分类号： G11C7/06
摘要：
A semiconductor memory device that includes a first high voltage oscillator configured to generate a first control pulse in response to a first enable signal, a level shifter configured to generate a high voltage control pulse by boosting a level of the first control pulse using a source high voltage, and a first high voltage generator configured to generate a high voltage by boosting an external power supply voltage in response to the high voltage control pulse.
公开/授权文献
- US20090059683A1 Semiconductor memory device 公开/授权日：2009-03-05
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