Invention Grant
- Patent Title: Manganese alloy sputtering target and method for producing the same
- Patent Title (中): 锰合金溅射靶及其制造方法
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Application No.: US11687765Application Date: 2007-03-19
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Publication No.: US07713364B2Publication Date: 2010-05-11
- Inventor: Yuichiro Nakamura
- Applicant: Yuichiro Nakamura
- Applicant Address: JP Tokyo
- Assignee: Nippon Mining & Metals Co., Ltd.
- Current Assignee: Nippon Mining & Metals Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2001-116323 20010416; JP2001-167040 20010601
- Main IPC: C22F1/16
- IPC: C22F1/16 ; C22F1/14 ; C22F1/10
Abstract:
A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.
Public/Granted literature
- US20070163878A1 Manganese Alloy Sputtering Target and Method for Producing the Same Public/Granted day:2007-07-19
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