发明授权
- 专利标题： Manganese alloy sputtering target and method for producing the same
- 专利标题（中）： 锰合金溅射靶及其制造方法
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申请号： US11687765申请日： 2007-03-19
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公开(公告)号： US07713364B2公开(公告)日： 2010-05-11
- 发明人: Yuichiro Nakamura
- 申请人： Yuichiro Nakamura
- 申请人地址： JP Tokyo
- 专利权人： Nippon Mining & Metals Co., Ltd.
- 当前专利权人： Nippon Mining & Metals Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Howson & Howson LLP
- 优先权： JP2001-116323 20010416; JP2001-167040 20010601
- 主分类号： C22F1/16
- IPC分类号： C22F1/16 ; C22F1/14 ; C22F1/10
摘要：
A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.
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