Invention Grant
- Patent Title: Method for forming isotope-doped light element nanotube
- Patent Title (中): 形成同位素掺杂光元素纳米管的方法
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Application No.: US11118588Application Date: 2005-04-29
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Publication No.: US07713583B2Publication Date: 2010-05-11
- Inventor: Shou-Shan Fan , Liang Liu
- Applicant: Shou-Shan Fan , Liang Liu
- Applicant Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Agent D. Austin Bonderer
- Priority: CN02152098 20021127; CN200410027378 20040520
- Main IPC: C23C16/02
- IPC: C23C16/02 ; C23C16/26

Abstract:
An isotope-doped carbon nanotube (40) includes at least two kinds of carbon nanotube segments, each kind of carbon nanotube segment having a unique carbon isotope. The at least two kinds of carbon nanotube segments are arranged along a longitudinal direction of the carbon nanotube alternately or non-alternately. The carbon isotope is selected from the group consisting of a carbon-12 isotope, a carbon-13 isotope and a carbon-14 isotope. Three preferred methods employ different single isotope sources to form isotope-doped carbon nanotubes. In a chemical vapor deposition method, different isotope source gases are alternately or non-alternately introduced. In an arc discharge method, a power source is alternately or non-alternately switched between different isotope anodes. In a laser ablation method, a laser is alternately or non-alternately focused on different isotope targets.
Public/Granted literature
- US20050191417A1 Isotope-doped carbon nanotube and method for making the same Public/Granted day:2005-09-01
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