发明授权
- 专利标题： Apparatus and method for plasma etching
- 专利标题（中）： 用于等离子体蚀刻的装置和方法
-
申请号： US11735657申请日： 2007-04-16
-
公开(公告)号： US07713756B2公开(公告)日： 2010-05-11
- 发明人: Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
- 申请人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2003-206042 20030805
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/302 ; H01L21/306
摘要：
A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.
公开/授权文献
- US20070184563A1 APPARATUS AND METHOD FOR PLASMA ETCHING 公开/授权日：2007-08-09
信息查询
IPC分类:
