Invention Grant
- Patent Title: Variable shaped electron beam lithography system and method for manufacturing substrate
- Patent Title (中): 可变形电子束光刻系统及基板制造方法
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Application No.: US11899291Application Date: 2007-09-05
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Publication No.: US07714308B2Publication Date: 2010-05-11
- Inventor: Masahito Hiroshima
- Applicant: Masahito Hiroshima
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Priority: JP2006-241331 20060906
- Main IPC: H01J37/30
- IPC: H01J37/30 ; H01J37/08 ; G21K5/00
Abstract:
This VSB lithography system includes a first, second and third aperture for forming a single electron beam in each of the rectangular opening portion that are provided, and draws a figure pattern using the single electron beam formed by passing the beam through the first, second and third aperture in sequence. Each of the first, second and third aperture has a mechanism for rotationally driving the aperture around an optical axis up to an arbitrary angle from 0 to 360°. Further, in the third aperture, a mechanism for varying the opening slit width of the rectangular opening portion is provided.
Public/Granted literature
- US20080054196A1 Variable shaped electron beam lithography system and method for manufacturing substrate Public/Granted day:2008-03-06
Information query
