发明授权
US07714321B2 Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor
有权
有机薄膜晶体管,包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法
- 专利标题: Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor
- 专利标题(中): 有机薄膜晶体管,包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法
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申请号: US11378011申请日: 2006-03-17
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公开(公告)号: US07714321B2公开(公告)日: 2010-05-11
- 发明人: Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
- 申请人: Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
- 申请人地址: KR Yongin
- 专利权人: Samsung Mobile Display Co., Ltd.
- 当前专利权人: Samsung Mobile Display Co., Ltd.
- 当前专利权人地址: KR Yongin
- 代理机构: Knobbe Martens Olson & Bear LLP
- 优先权: KR10-2005-0022945 20050319; KR10-2005-0023841 20050322
- 主分类号: H01L35/24
- IPC分类号: H01L35/24 ; H01L51/00
摘要:
An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer. According to one embodiment, a patterning effect of an organic semiconductor layer is easily obtained and characteristics such as an on/off ratio are improved.
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