Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
-
Application No.: US11806032Application Date: 2007-05-29
-
Publication No.: US07714339B2Publication Date: 2010-05-11
- Inventor: Shuan-Ta Liu
- Applicant: Shuan-Ta Liu
- Applicant Address: TW Taipei
- Assignee: Neoton Optoelectronics Corp.
- Current Assignee: Neoton Optoelectronics Corp.
- Current Assignee Address: TW Taipei
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A light emitting diode (LED) includes a substrate, a first type epitaxial layer, a light emitting layer, a second type epitaxial layer and a plurality of nano-particles. The first type epitaxial layer is disposed on the substrate. The light emitting layer is disposed on the first type epitaxial layer. The second type epitaxial layer is disposed on the light emitting layer and has one surface formed with a plurality of recesses and a plurality of protrusions. The nano-particles are disposed on the protrusions of the second type epitaxial layer.
Public/Granted literature
- US20080296602A1 Light emitting diode Public/Granted day:2008-12-04
Information query
IPC分类: