发明授权
- 专利标题： MRAM with enhanced programming margin
- 专利标题（中）： MRAM具有增强的编程余量
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申请号： US11787330申请日： 2007-04-16
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公开(公告)号： US07715224B2公开(公告)日： 2010-05-11
- 发明人: Tai Min , Po Kang Wang
- 申请人： Tai Min , Po Kang Wang
- 申请人地址： US CA Milpitas
- 专利权人： MagIC Technologies, Inc.
- 当前专利权人： MagIC Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/14 ; G11C11/15
摘要：
An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture.
公开/授权文献
- US20080253178A1 MRAM with enhanced programming margin 公开/授权日：2008-10-16