发明授权
- 专利标题: Programmable ROM using two bonded strata
- 专利标题(中): 可编程ROM使用两个粘结层
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申请号: US11865991申请日: 2007-10-02
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公开(公告)号: US07715227B2公开(公告)日: 2010-05-11
- 发明人: Syed M. Alam , Robert E. Jones
- 申请人: Syed M. Alam , Robert E. Jones
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Robert L. King; Michael J. Balconi-Lamica
- 主分类号: G11C11/50
- IPC分类号: G11C11/50
摘要:
A read only memory implemented as a 3D integrated device has a first stratum, a second stratum, and bonded inter-strata connections for coupling the first stratum to the second stratum. The physical bonding between the two strata implements the programming of the read only memory. The stratum may be in wafer form or in die form. The first stratum includes functional active devices and at least one non-programmed active device. The second stratum includes at least conductive routing to be associated with the at least one non-programmed active device. The bonded inter-strata connections include at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for providing conductive routing to the programmed active device. The two strata thus form a programmed ROM. Other types of programmable storage devices may be implemented by bonding the two strata.