发明授权
- 专利标题： Method of operating a flash memory device
- 专利标题（中）： 操作闪存设备的方法
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申请号： US12146927申请日： 2008-06-26
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公开(公告)号： US07715230B2公开(公告)日： 2010-05-11
- 发明人: Jum Soo Kim , Tae Gyun Kim
- 申请人： Jum Soo Kim , Tae Gyun Kim
- 申请人地址： KR Icheon-si, Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si, Kyoungki-do
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 优先权： KR10-2007-0119034 20071121
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method of operating a flash memory device wherein the width of threshold voltage distribution of memory cells is adjusted by setting different conditions of a program operation in accordance with levels of threshold voltages of the memory cells. As a result, width of the threshold voltage distribution of memory cells may be narrowed.
公开/授权文献
- US20090129168A1 METHOD OF OPERATING A FLASH MEMEORY DEVICE 公开/授权日：2009-05-21