发明授权
- 专利标题： Method to control semiconductor film deposition characteristics
- 专利标题（中）： 控制半导体膜沉积特性的方法
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申请号： US11205647申请日： 2005-08-17
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公开(公告)号： US07718225B2公开(公告)日： 2010-05-18
- 发明人: Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
- 申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Diehl Servilla, LLC
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.