发明授权
- 专利标题： Method for fabricating semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12073492申请日： 2008-03-06
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公开(公告)号： US07718515B2公开(公告)日： 2010-05-18
- 发明人: Kazuhide Abe
- 申请人： Kazuhide Abe
- 申请人地址： JP Tokyo
- 专利权人： Oki Semiconductor Co., Ltd.
- 当前专利权人： Oki Semiconductor Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Rabin & Berdo, PC
- 优先权： JP2007-071926 20070320
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The principal objects of the present invention are to provide structure of a semiconductor device capable of reducing a bowing of a wafer, and a method for fabricating the semiconductor device. The present invention is applied to a semiconductor device, which is fabricated with a semiconductor substrate having a silicon carbide (SiC) film. The method includes the steps of: forming the SiC film on a semiconductor wafer; discriminating a deformation condition of the semiconductor wafer; and forming grooves in the SiC film, the grooves having a shape determined in accordance with the deformation condition of the semiconductor wafer.
公开/授权文献
- US20080233716A1 Method for fabricating semiconductor device 公开/授权日：2008-09-25