发明授权
- 专利标题： Method of forming silicon-containing insulation film having low dielectric constant and low diffusion coefficient
- 专利标题（中）： 形成具有低介电常数和低扩散系数的含硅绝缘膜的方法
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申请号： US11382512申请日： 2006-05-10
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公开(公告)号： US07718544B2公开(公告)日： 2010-05-18
- 发明人: Naoto Tsuji , Kiyohiro Matsushita , Satoshi Takahashi , Nathan Kameling
- 申请人： Naoto Tsuji , Kiyohiro Matsushita , Satoshi Takahashi , Nathan Kameling
- 申请人地址： JP Tokyo
- 专利权人： ASM Japan K.K.
- 当前专利权人： ASM Japan K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method for fabricating a semiconductor device includes: forming on a substrate a silicon-containing insulation film having a diffusion coefficient of about 250 μm2/min or less as measured using isopropyl alcohol, by plasma reaction using a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing plural cross-linkable groups, (ii) a cross-linking gas, (iii) an inert gas, and optionally (iv) an oxygen-supplying gas, wherein a flow rate of the oxygen-supplying gas is no more than 25% of that of the source gas; and subjecting the insulation film to an integration process to fabricate a semiconductor device.
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