Invention Grant
- Patent Title: Heating element for enhanced E2PROM
- Patent Title (中): 加热元件，用于增强E2PROM
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Application No.: US11796050Application Date: 2007-04-26
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Publication No.: US07719048B1Publication Date: 2010-05-18
- Inventor: Jeff A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
- Applicant: Jeff A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Dergosits & Noah LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A heating element is utilized to improve the bias conditions of an E2PROM cell during program and erase operations. The heating element can also be used to anneal or condition the cell for improved charge storage. During a program or an erase operation, the cell's control gate and read transistor are set to ground. The heating element then has a voltage potential applied across its terminals, causing current to flow in this resistor. As the current density increases, the resistor begins to generate heat. This heat is thermally coupled into the cell's floating gate, causing its temperature to rise.
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