发明授权
- 专利标题： Fin field effect transistor arrangement and method for producing a fin field effect transistor arrangement
- 专利标题（中）： 翅片场效应晶体管布置及其制造方法
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申请号： US11588868申请日： 2006-10-27
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公开(公告)号： US07719059B2公开(公告)日： 2010-05-18
- 发明人: Franz Hofmann , Erhard Landgraf , Richard Johannes Luyken
- 申请人： Franz Hofmann , Erhard Landgraf , Richard Johannes Luyken
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Slater & Matsil, L.L.P.
- 优先权： DE102004020593 20040427
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/8238 ; H01L27/12
摘要：
A fin field effect transistor arrangement comprises a substrate and a first fin field effect transistor on and/or in the substrate. The first fin field effect transistor includes a fin in which a channel region is formed between a first source/drain region and a second source/drain region and above which a gate region is formed. A second fin field effect transistor is provided on and/or in the substrate including a fin in which a channel region is formed between a first source/drain region and a second source/drain region and above which a gate region is formed. The second fin field effect transistor is arranged laterally alongside the first fin field effect transistor, wherein a height of the fin of the first fin field effect transistor is greater than a height of the fin of the second fin field effect transistor.
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