发明授权
- 专利标题: High voltage CMOS devices
- 专利标题(中): 高压CMOS器件
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申请号: US12100888申请日: 2008-04-10
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公开(公告)号: US07719064B2公开(公告)日: 2010-05-18
- 发明人: Chen-Bau Wu , Chien-Shao Tang , Robin Hsieh , Ruey-Hsin Liu , Shun-Liang Hsu
- 申请人: Chen-Bau Wu , Chien-Shao Tang , Robin Hsieh , Ruey-Hsin Liu , Shun-Liang Hsu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that they are not immediately adjacent each other. The well of the first conductivity type and the second conductivity type may be formed simultaneously as respective wells for low-voltage devices. In this manner, the high-voltage devices may be formed on the same wafer as low-voltage devices with fewer process steps, thereby reducing costs and process time. A doped isolation well may be formed adjacent the first well on an opposing side from the second well to provide further device isolation.
公开/授权文献
- US20080191291A1 High Voltage CMOS Devices 公开/授权日:2008-08-14