Invention Grant
US07723193B2 Method of forming an at least penta-sided-channel type of FinFET transistor
有权
形成至少五面通道型FinFET晶体管的方法
- Patent Title: Method of forming an at least penta-sided-channel type of FinFET transistor
- Patent Title (中): 形成至少五面通道型FinFET晶体管的方法
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Application No.: US12149329Application Date: 2008-04-30
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Publication No.: US07723193B2Publication Date: 2010-05-25
- Inventor: Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
- Applicant: Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2004-3568 20040117
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
Public/Granted literature
- US20080242010A1 At least penta-sided-channel type of finfet transistor Public/Granted day:2008-10-02
Information query
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