发明授权
US07723193B2 Method of forming an at least penta-sided-channel type of FinFET transistor
有权
形成至少五面通道型FinFET晶体管的方法
- 专利标题： Method of forming an at least penta-sided-channel type of FinFET transistor
- 专利标题（中）： 形成至少五面通道型FinFET晶体管的方法
-
申请号： US12149329申请日： 2008-04-30
-
公开(公告)号： US07723193B2公开(公告)日： 2010-05-25
- 发明人: Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
- 申请人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR2004-3568 20040117
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
公开/授权文献
- US20080242010A1 At least penta-sided-channel type of finfet transistor 公开/授权日：2008-10-02
信息查询
IPC分类:
