Invention Grant
- Patent Title: Thin film transistor substrate with bonding layer and method for fabricating the same
- Patent Title (中): 具有接合层的薄膜晶体管基板及其制造方法
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Application No.: US11985114Application Date: 2007-11-13
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Publication No.: US07723726B2Publication Date: 2010-05-25
- Inventor: Shuo-Ting Yan
- Applicant: Shuo-Ting Yan
- Applicant Address: TW Miao-Li County
- Assignee: Innolux Display Corp.
- Current Assignee: Innolux Display Corp.
- Current Assignee Address: TW Miao-Li County
- Agent Wei Te Chung
- Priority: TW95141785A 20061110
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
An exemplary thin film transistor substrate (30) includes a base substrate (31) and a gate electrode (32) formed on the base substrate. The gate electrode includes a bonding layer (321) formed on the base substrate and an electrically conductive layer (322) formed on the bonding layer. The bonding layer includes one of aluminum oxide and zirconium dioxide.
Public/Granted literature
- US20080111137A1 Thin film transistor substrate with bonding layer and method for fabricating the same Public/Granted day:2008-05-15
Information query
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