发明授权
- 专利标题： Semiconductor devices and methods of manufacture thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11805232申请日： 2007-05-22
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公开(公告)号： US07723818B2公开(公告)日： 2010-05-25
- 发明人: Armin Tilke , Frank Huebinger , Hermann Wendt
- 申请人： Armin Tilke , Frank Huebinger , Hermann Wendt
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/76
摘要：
Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and a trench formed within the workpiece. The trench has an upper portion and a lower portion, the upper portion having a first width and the lower portion having a second width, the second width being greater than the first width. A first material is disposed in the lower portion of the trench at least partially in regions where the second width of the lower portion is greater than the first width of the upper portion. A second material is disposed in the upper portion of the trench and at least in the lower portion of the trench beneath the upper portion.
公开/授权文献
- US20080290448A1 Semiconductor devices and methods of manufacture thereof 公开/授权日：2008-11-27
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