Invention Grant
US07723909B2 Electron emitter formed of a dielectric material characterized by having high mechanical quality factor
有权
由介电材料形成的电子发射体,其特征在于具有高的机械品质因数
- Patent Title: Electron emitter formed of a dielectric material characterized by having high mechanical quality factor
- Patent Title (中): 由介电材料形成的电子发射体,其特征在于具有高的机械品质因数
-
Application No.: US11471938Application Date: 2006-06-21
-
Publication No.: US07723909B2Publication Date: 2010-05-25
- Inventor: Hirofumi Yamaguchi , Kei Sato
- Applicant: Hirofumi Yamaguchi , Kei Sato
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2005-183308 20050623
- Main IPC: H01J19/06
- IPC: H01J19/06 ; H01J1/14

Abstract:
A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.
Public/Granted literature
- US20060290255A1 Electron emitter Public/Granted day:2006-12-28
Information query