发明授权
- 专利标题: Magneto-resistive head resistance sensor
- 专利标题(中): 磁阻电阻传感器
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申请号: US11034997申请日: 2005-01-13
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公开(公告)号: US07724460B2公开(公告)日: 2010-05-25
- 发明人: David J. Fitzgerald , Jeffrey A. Gleason , James P. Howley , Scott M. O'Brien , Michael P. Straub
- 申请人: David J. Fitzgerald , Jeffrey A. Gleason , James P. Howley , Scott M. O'Brien , Michael P. Straub
- 申请人地址: US PA Allentown
- 专利权人: Agere Systems Inc.
- 当前专利权人: Agere Systems Inc.
- 当前专利权人地址: US PA Allentown
- 代理机构: Mendelsohn, Drucker & Associates, P.C.
- 代理商 Steve Mendelsohn
- 主分类号: G11B5/02
- IPC分类号: G11B5/02 ; G11B5/03 ; G11B5/09
摘要:
A recording system employing a magneto-resistive (MR) element senses a resistance value of the MR element and generates one or more MR resistance (MRR) signal values based on the sensed MR element resistance value. The MRR signal values might be, for example, current or voltage values proportional or inversely proportional to the MR element resistance value. The MRR signal values might be employed to control one or more of: i) a unity gain bandwidth of a bias loop for the MR element, ii) an MR read head preamplifier low corner frequency, and iii) a slew rate across the MR element.
公开/授权文献
- US20060152838A1 Magneto-resistive head resistance sensor 公开/授权日:2006-07-13
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