发明授权
US07724583B2 Internal voltage generator and control method thereof, and semiconductor memory device and system including the same
有权
内部电压发生器及其控制方法以及包括其的半导体存储器件及系统
- 专利标题： Internal voltage generator and control method thereof, and semiconductor memory device and system including the same
- 专利标题（中）： 内部电压发生器及其控制方法以及包括其的半导体存储器件及系统
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申请号： US12175494申请日： 2008-07-18
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公开(公告)号： US07724583B2公开(公告)日： 2010-05-25
- 发明人: Dae-Seok Byeon
- 申请人： Dae-Seok Byeon
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2007-0072314 20070719
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
An internal voltage of a semiconductor memory device is controlled, where the internal voltage is set according to a reference voltage. The reference voltage is controlled according to first control data to increase the internal voltage to be higher than a target voltage in a power-up operation, and second control data is read. The reference voltage is then controlled according to the second control data to decrease the internal voltage to the target voltage.
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