发明授权
US07724799B2 VCSEL, optical device, light irradiation device, data processing device, light source, free space optical communication device, and optical transmission system
有权
VCSEL，光学装置，光照射装置，数据处理装置，光源，自由空间光通信装置和光传输系统
- 专利标题： VCSEL, optical device, light irradiation device, data processing device, light source, free space optical communication device, and optical transmission system
- 专利标题（中）： VCSEL，光学装置，光照射装置，数据处理装置，光源，自由空间光通信装置和光传输系统
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申请号： US12110448申请日： 2008-04-28
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公开(公告)号： US07724799B2公开(公告)日： 2010-05-25
- 发明人: Masateru Yamamoto , Masahiro Yoshikawa , Takashi Kondo
- 申请人： Masateru Yamamoto , Masahiro Yoshikawa , Takashi Kondo
- 申请人地址： JP Tokyo
- 专利权人： Fuji Xerox Co., Ltd.
- 当前专利权人： Fuji Xerox Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Fildes & Outland, P.C.
- 优先权： JP2007-126974 20070511
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.
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