发明授权
- 专利标题： X-ray detector
- 专利标题（中）： X射线探测器
-
申请号： US12397746申请日： 2009-03-04
-
公开(公告)号： US07728301B2公开(公告)日： 2010-06-01
- 发明人: Masaki Atsuta , Yujiro Hara , Hideyuki Nakao
- 申请人： Masaki Atsuta , Yujiro Hara , Hideyuki Nakao
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-077856 20080325
- 主分类号： G01T1/24
- IPC分类号： G01T1/24
摘要：
An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential.
公开/授权文献
- US20090242781A1 X-RAY DETECTOR 公开/授权日：2009-10-01
信息查询
