发明授权
US07728622B2 Software programmable logic using spin transfer torque magnetoresistive random access memory
有权
软件可编程逻辑采用自旋传输转矩磁阻随机存取存储器
- 专利标题： Software programmable logic using spin transfer torque magnetoresistive random access memory
- 专利标题（中）： 软件可编程逻辑采用自旋传输转矩磁阻随机存取存储器
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申请号： US12055794申请日： 2008-03-26
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公开(公告)号： US07728622B2公开(公告)日： 2010-06-01
- 发明人: Lew Chua-Eoan , Matthew Nowak , Seung Kang
- 申请人： Lew Chua-Eoan , Matthew Nowak , Seung Kang
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Nicholas J. Pauley; Sam Talpalatsky; Peter Kamarchik
- 主分类号： G06F7/38
- IPC分类号： G06F7/38 ; H03K19/177
摘要：
Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.