发明授权
US07732054B2 Method for preparing ZnO nanocrystals directly on silicon substrate
失效
在硅衬底上直接制备ZnO纳米晶体的方法
- 专利标题： Method for preparing ZnO nanocrystals directly on silicon substrate
- 专利标题（中）： 在硅衬底上直接制备ZnO纳米晶体的方法
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申请号： US11966552申请日： 2007-12-28
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公开(公告)号： US07732054B2公开(公告)日： 2010-06-08
- 发明人: Young Hwan Kim , Woon Jo Cho , Seong Kim, II , Chun Keun Kim , Yong Tae Kim
- 申请人： Young Hwan Kim , Woon Jo Cho , Seong Kim, II , Chun Keun Kim , Yong Tae Kim
- 申请人地址： KR Seoul
- 专利权人： Korea Institute of Science and Technology
- 当前专利权人： Korea Institute of Science and Technology
- 当前专利权人地址： KR Seoul
- 代理机构： Browdy & Neimark, PLLC
- 优先权： KR10-2007-0000143 20070102
- 主分类号： B32B9/04
- IPC分类号： B32B9/04 ; B32B13/04 ; B32B9/00 ; H01L29/10
摘要：
A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S1) forming a Zn—Si—O composite thin film on the silicon substrate; and (S2) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn—Si—O composite thin film by controlling the composition of the Zn—Si—O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.
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