发明授权
- 专利标题: Methods of forming NAND flash memory with fixed charge
- 专利标题(中): 用固定电荷形成NAND闪存的方法
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申请号: US11692961申请日: 2007-03-29
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公开(公告)号: US07732275B2公开(公告)日: 2010-06-08
- 发明人: Takashi Orimoto , George Matamis , Henry Chien , James Kai
- 申请人: Takashi Orimoto , George Matamis , Henry Chien , James Kai
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Vierra Magen Marcus & DeNiro LLP
- 主分类号: H01L21/8247
- IPC分类号: H01L21/8247
摘要:
A string of nonvolatile memory cells connected in series includes fixed charges located between floating gates and the underlying substrate surface. Such a fixed charge affects distribution of charge carriers in an underlying portion of the substrate and thus affects threshold voltage of a device. A fixed charge layer may extend over source/drain regions also.
公开/授权文献
- US20080242006A1 METHODS OF FORMING NAND FLASH MEMORY WITH FIXED CHARGE 公开/授权日:2008-10-02
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