发明授权
- 专利标题： Semiconductor device and fabrication process of semiconductor device
- 专利标题（中）： 半导体器件的半导体器件和制造工艺
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申请号： US11338878申请日： 2006-01-25
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公开(公告)号： US07732347B2公开(公告)日： 2010-06-08
- 发明人: Makoto Nakamura
- 申请人： Makoto Nakamura
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method of fabricating a semiconductor device on a Si substrate includes a first step of forming an insulation film containing an oxide of Zr or Hf on a Si substrate, a second step of forming a gate electrode film on the insulation film, a third step of patterning the gate electrode film by an etching process, a fourth step of annealing, after the third step, the insulation film in a processing gas ambient containing halogen, and a fifth step of removing the insulation film applied with the annealing process.
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