发明授权
- 专利标题： High-K dielectric materials and processes for manufacturing them
- 专利标题（中）： 高K介电材料及其制造方法
-
申请号： US11499308申请日： 2006-08-03
-
公开(公告)号： US07732852B2公开(公告)日： 2010-06-08
- 发明人: Jiong-Ping Lu , Ming-Jang Hwang
- 申请人： Jiong-Ping Lu , Ming-Jang Hwang
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.