发明授权
- 专利标题： MOS devices with continuous contact etch stop layer
- 专利标题（中）： 具有连续接触蚀刻停止层的MOS器件
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申请号： US11583634申请日： 2006-10-18
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公开(公告)号： US07732878B2公开(公告)日： 2010-06-08
- 发明人: Liang-Gi Yao , Shiang-Bau Wang , Huan-Just Lin , Peng-Fu Hsu , Jin Ying , Hun-Jan Tao
- 申请人： Liang-Gi Yao , Shiang-Bau Wang , Huan-Just Lin , Peng-Fu Hsu , Jin Ying , Hun-Jan Tao
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor structure includes a substrate, a gate stack on the substrate, a source/drain region adjacent the gate stack, a source/drain silicide region on the source/drain region, a protection layer on the source/drain silicide region, wherein a region over the gate stack is substantially free from the protection layer, and a contact etch stop layer (CESL) having a stress over the protection layer and extending over the gate stack.
公开/授权文献
- US20080093675A1 MOS devices with continuous contact etch stop layer 公开/授权日：2008-04-24
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