发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12132181申请日： 2008-06-03
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公开(公告)号： US07732891B2公开(公告)日： 2010-06-08
- 发明人: Hiroyasu Tanaka , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh , Yoshiaki Fukuzumi , Masaru Kito , Yasuyuki Matsuoka
- 申请人： Hiroyasu Tanaka , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh , Yoshiaki Fukuzumi , Masaru Kito , Yasuyuki Matsuoka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L29/93
- IPC分类号： H01L29/93 ; H01L21/76
摘要：
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section.
公开/授权文献
- US20090294844A1 SEMICONDUCTOR DEVICE 公开/授权日：2009-12-03
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