发明授权
US07736965B2 Method of making a FinFET device structure having dual metal and high-k gates
失效
制造具有双金属和高k栅极的FinFET器件结构的方法
- 专利标题： Method of making a FinFET device structure having dual metal and high-k gates
- 专利标题（中）： 制造具有双金属和高k栅极的FinFET器件结构的方法
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申请号： US11951552申请日： 2007-12-06
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公开(公告)号： US07736965B2公开(公告)日： 2010-06-15
- 发明人: Kangguo Cheng , Ramachandra Divakaruni
- 申请人： Kangguo Cheng , Ramachandra Divakaruni
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Joseph P. Abate
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
Methods include making a FinFET device structure having multiple FinFET devices (e.g. ntype and/or ptype) with different metal conductors and/or different high-k insulators in the gates formed on a SOI substrate. One such method includes removing a second semiconductor layer from a second metal layer in a region above a second cap layer, from adjoining regions and from regions adjacent to a second fin.