发明授权
- 专利标题: Thin film transistor array panel and manufacture thereof
- 专利标题(中): 薄膜晶体管阵列及其制造
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申请号: US11927377申请日: 2007-10-29
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公开(公告)号: US07737448B2公开(公告)日: 2010-06-15
- 发明人: Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Jung-Hun Noh
- 申请人: Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Jung-Hun Noh
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Innovation Counsel LLP
- 优先权: KR10-2007-0031350 20070330
- 主分类号: H01L27/14
- IPC分类号: H01L27/14
摘要:
A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode.
公开/授权文献
- US20080237582A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURE THEREOF 公开/授权日:2008-10-02
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