发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12122424申请日： 2008-05-16
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公开(公告)号： US07737511B2公开(公告)日： 2010-06-15
- 发明人: Kouichi Muraoka , Kazuaki Kurihara
- 申请人： Kouichi Muraoka , Kazuaki Kurihara
- 申请人地址： JP Tokyo
- 专利权人： Kabushikik Kaisha Toshiba
- 当前专利权人： Kabushikik Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2001-295367 20010927; JP2002-094149 20020329
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of silicon oxide, and heating the structure in an atmosphere containing He and/or Ne.
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