发明授权
US07738275B2 Leakage current cut-off device for ternary content addressable memory
有权
用于三元内容可寻址存储器的泄漏电流截止装置
- 专利标题： Leakage current cut-off device for ternary content addressable memory
- 专利标题（中）： 用于三元内容可寻址存储器的泄漏电流截止装置
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申请号： US12007826申请日： 2008-01-16
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公开(公告)号： US07738275B2公开(公告)日： 2010-06-15
- 发明人: Po-Tsang Huang , Wen-Yen Liu , Wei Hwang
- 申请人： Po-Tsang Huang , Wen-Yen Liu , Wei Hwang
- 申请人地址： TW Hsinchu
- 专利权人： National Chiao Tung University
- 当前专利权人： National Chiao Tung University
- 当前专利权人地址： TW Hsinchu
- 代理机构： Rosenberg, Klein & Lee
- 优先权： TW96149397A 20071221
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode.
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