A read-out circuit for or in a ROM memory, comprises an input, a comparator circuit, a threshold setting, and a control signal generator for driving the threshold setting generator. A read signal can be coupled into the input. The read signal, depending on the information contained in the read signal, comprises a high signal level relative to a reference potential or a low signal level relative to a reference potential. The comparator circuit compares the read signal with a settable threshold, the threshold setting circuit is designed for setting the threshold of the comparator circuit relative to the high and low signal levels, and the control signal generator generates a control signal similar to the read signal.