发明授权
- 专利标题: Solar cell manufacturing method
- 专利标题(中): 太阳能电池制造方法
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申请号: US11300539申请日: 2005-12-15
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公开(公告)号: US07741139B2公开(公告)日: 2010-06-22
- 发明人: Yoichiro Nishimoto
- 申请人: Yoichiro Nishimoto
- 申请人地址: JP Chiyoda-Ku, Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JP Chiyoda-Ku, Tokyo
- 代理机构: Buchanan Ingersoll & Rooney PC
- 优先权: JP2005-226865 20050804
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of manufacturing a solar cell includes forming a diffusion layer on a crystal-type silicon substrate. The diffusion layer has a conductivity opposite to that of the substrate. Furthermore, the method includes etching and removing a part of the diffusion layer by using sodium silicate, and forming a first electrode that makes an electric contact with the diffusion layer and forming a second electrode that makes an electric contact with the substrate.
公开/授权文献
- US20070031986A1 Solar cell manufacturing method 公开/授权日:2007-02-08
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